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| inchange semiconductor product specification silicon npn power transistors 2SD743 2SD743a description ? ?with to-220c package ? complement to type 2sb703/703a applications ? designed for use in audio frequency power amplifier ,low speed sw itching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter maximum absolute ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v 2SD743 80 v ceo collector-emitter voltage 2SD743a open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 4 a i cm collector current-peak 6 a i b base current 1 a p c collector power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -50~150 ?? thermal characteristics symbol characteristics max unit r | jc thermal resistance junction to case 3.125 ??/w fig.1 simplified outline (to-220) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD743 2SD743a characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2SD743 80 v (br)ceo collector-emitter breakdown voltage 2SD743a i c =10ma; i b =0 100 v v (br)cbo collector-base breakdown voltage i c =1.0ma; i e =0 100 v v (br)ebo emitter-base breakdown voltage i e =1.0ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =3a; i b =0.3a 2.0 v v besat base-emitter saturation voltage i c =3a; i b =0.3a 2.0 v i cbo collector cut-off current v cb =80v; i e =0 10 | a i ebo emitter cut-off current v eb =3v; i c =0 10 | a h fe-1 dc current gain i c =20ma ; v ce =5v 20 h fe-2 dc current gain i c =0.5a ; v ce =5v 40 200 f t transition frequency i c =0.1a ; v ce =5v;f=1.0mhz 10 mhz ? h fe-2 classifications s r q 40-80 60-120 100-200 inchange semiconductor product specification 3 silicon npn power transistors 2SD743 2SD743a package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10mm) |
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